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Harmonic Oscillator Wave Functions of a Self-Assembled InAs Quantum Dot Measured by Scanning Tunneling Microscopy

Identifieur interne : 000C16 ( Main/Repository ); précédent : 000C15; suivant : 000C17

Harmonic Oscillator Wave Functions of a Self-Assembled InAs Quantum Dot Measured by Scanning Tunneling Microscopy

Auteurs : RBID : Pascal:13-0289719

Descripteurs français

Pascal (Inist)
- Fonction harmonique, Fonction onde, Autoassemblage, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Point quantique, Nanomatériau, Microscopie tunnel balayage, Diode effet tunnel résonnant, Spectrométrie tunnel balayage, Etat lié, Résolution spatiale, Effet tunnel, Arséniure d'aluminium, Niveau énergie, Masse effective, InAs, AlAs, 8116D, 8107T, 8535B, 8107B.

English descriptors

KwdEn :
- Aluminium arsenides, Bound state, Effective mass, Energy levels, Harmonic function, III-V compound, III-V semiconductors, Indium arsenides, Nanostructured materials, Quantum dots, Resonant tunneling diodes, Scanning tunneling microscopy, Scanning tunneling spectroscopy, Self-assembly, Spatial resolution, Tunnel effect, Wave functions.

Abstract

InAs quantum dots embedded in an AlAs matrix inside a double barrier resonant tunneling diode are investigated by cross-sectional scanning tunneling spectroscopy. The wave functions of the bound quantum dot states are spatially and energetically resolved. These bound states are known to be responsible for resonant tunneling phenomena in such quantum dot diodes. The wave functions reveal a textbook-like one-dimensional harmonic oscillator behavior showing up to five equidistant energy levels of 80 meV spacing. The derived effective oscillator mass of m^* = 0.24m₀ is 1 order of magnitude higher than the effective electron mass of bulk InAs that we attribute to the influence of the surrounding AlAs matrix. This underlines the importance of the matrix material for tailored QD devices with well-defined properties.

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Pascal:13-0289719

Le document en format XML

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<author><name sortKey="Teichmann, Karen" uniqKey="Teichmann K">Karen Teichmann</name>
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<country>Allemagne</country>
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<author><name sortKey="Wenderoth, Martin" uniqKey="Wenderoth M">Martin Wenderoth</name>
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<s2>37077 Göttingen</s2>
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<author><name sortKey="Pr Ser, Henning" uniqKey="Pr Ser H">Henning Pr Ser</name>
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<author><name sortKey="Pierz, Klaus" uniqKey="Pierz K">Klaus Pierz</name>
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<author><name sortKey="Schumacher, Hans W" uniqKey="Schumacher H">Hans W. Schumacher</name>
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<author><name sortKey="Ulbrich, Rainer G" uniqKey="Ulbrich R">Rainer G. Ulbrich</name>
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<country>Allemagne</country>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term>
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<term>Spatial resolution</term>
<term>Tunnel effect</term>
<term>Wave functions</term>
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<term>Fonction onde</term>
<term>Autoassemblage</term>
<term>Arséniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Point quantique</term>
<term>Nanomatériau</term>
<term>Microscopie tunnel balayage</term>
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<term>Spectrométrie tunnel balayage</term>
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<term>Masse effective</term>
<term>InAs</term>
<term>AlAs</term>
<term>8116D</term>
<term>8107T</term>
<term>8535B</term>
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<front><div type="abstract" xml:lang="en">InAs quantum dots embedded in an AlAs matrix inside a double barrier resonant tunneling diode are investigated by cross-sectional scanning tunneling spectroscopy. The wave functions of the bound quantum dot states are spatially and energetically resolved. These bound states are known to be responsible for resonant tunneling phenomena in such quantum dot diodes. The wave functions reveal a textbook-like one-dimensional harmonic oscillator behavior showing up to five equidistant energy levels of 80 meV spacing. The derived effective oscillator mass of m<sup>*</sup>
 = 0.24m<sub>0</sub>
 is 1 order of magnitude higher than the effective electron mass of bulk InAs that we attribute to the influence of the surrounding AlAs matrix. This underlines the importance of the matrix material for tailored QD devices with well-defined properties.</div>
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 = 0.24m<sub>0</sub>
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Harmonic Oscillator Wave Functions of a Self-Assembled InAs Quantum Dot Measured by Scanning Tunneling Microscopy

Harmonic Oscillator Wave Functions of a Self-Assembled InAs Quantum Dot Measured by Scanning Tunneling Microscopy

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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